Photoresist stripping methods

Modified methods of cleanup and stripping of the photoresist mask is to be developed. 

The third method for endpoint detection uses a mass spectrometer that monitors a particular species whose concentration changes dramatically at the endpoint. In all three methods, the etch rate for a particular material can be determined. However, the interferometer technique has two advantages over the other methods. Changes in the etch rate with time can be detected and quantified, and significant etching of photoresist can be detected from the output of the strip chart recorder. In the next section, we take up the applications of plasma etching. 

In the second incarnation, photoresist is deposited and patterned on a nickel substrate rather than Si. Electroplating is performed using the same conditions as described above tmtil nickel completely fills all microstructures. In this method, it is necessary to mechanically polish the nickel microstructures to the desired height prior to embossing. Photoresist is stripped... 

This is essentially a hybrid method in which copper is first deposited onto the whole of either one or two sides of an unclad substrate using the additive process. The wiring pattern is defined in the conventional manner using photoresist and copper is electroplated to build up the thickness of the wiring pattern. Photoresist is stripped and the background electroless copper is removed by a quick etch. 

Fig. 1 Three different methods to pattern the CP layers. (A) Etching, e.g., using RIE A1 deposition of the patterned photoresist, A2 etching of the CP layer, A3 (wet chemical) etching of the metal layer, and finally A4 stripping of the photoresist. (B) Patterned electrodes Bl deposition of the patterned photoresist, B2 (wet chemical) etching of the metal layer, B3 stripping of the photoresist, B4 electrosynthesis of CP on the patterned metal electrode. (C) Resist holes Cl deposition of the patterned photoresist, C2 electrosynthesis of CP in the patterned photoresist layer, C3 stripping of the photoresist, C4 (wet chemical) etching of the metal layer, depending on the etchant a protective photoresist layer similar to A2 might be needed in this step...

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