Photoluminescence spectroscopy temperature effect

As for silicon, secondary ion mass spectrometry (SIMS) is the most widely used profiling analysis technique for deuterium diffusion studies in III-V compounds. Deuterium advantageously replaces hydrogen for lowering the detection limit. The investigations of donor and acceptor neutralization effects have been usually performed through electrical measurements, low temperature photoluminescence, photothermal ionization spectroscopy (PTIS) and infrared absorption spectroscopy. These spectroscopic investigations will be treated in a separated part of this chapter. 

Low-excitation, low-temperature experiments like photoluminescence or photoluminescence excitation spectroscopy tend to indicate a considerable influence of localisation effects on the optical properties of GakiN/GaN quantum wells. Under high-excitation conditions typical for lasing, however, it is clearly seen that lasing from GalnN/GaN quantum well structures is due to a free-carrier plasma. 

The nanocrystalline semiconductors, PbS and CuS, were prepared by y-irradiation at room temperature in an ethanol system by Qiao et al. (1999). Carbon disulfide was used as the sulfur source lead acetate and copper chloride were used as metal ion sources. The purity and compositions of the products were examined by x-ray photoelectron spectroscopy. The photoluminescence property of as-prepared PbS was further studied. A blue shift observed in the PL spectra indicated the quantum size effect on nanocrystalline PbS. 

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