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Photoanode anodic decomposition

One additional problem at semiconductor/liquid electrolyte interfaces is the redox decomposition of the semiconductor itself.(24) Upon Illumination to create e- - h+ pairs, for example, all n-type semiconductor photoanodes are thermodynamically unstable with respect to anodic decomposition when immersed in the liquid electrolyte. This means that the oxidizing power of the photogenerated oxidizing equivalents (h+,s) is sufficiently great that the semiconductor can be destroyed. This thermodynamic instability 1s obviously a practical concern for photoanodes, since the kinetics for the anodic decomposition are often quite good. Indeed, no non-oxide n-type semiconductor has been demonstrated to be capable of evolving O2 from H2O (without surface modification), the anodic decomposition always dominates as in equations (6) and (7) for... [Pg.71]

Fig. 7.7 Percentage of photogenerated holes that contribute to anodic decomposition versus O2 evolution from naked (no catalyst), Pt-coated, and polymer-Pt coated n-CdS photoanode in 0.5 M Na2S04 solution (pH = 8.6) [14]. Fig. 7.7 Percentage of photogenerated holes that contribute to anodic decomposition versus O2 evolution from naked (no catalyst), Pt-coated, and polymer-Pt coated n-CdS photoanode in 0.5 M Na2S04 solution (pH = 8.6) [14].
N-type semiconductors can be used as photoanodes in electrochemical cells Q., 2, 3), but photoanodic decomposition of the photoelectrode often competes with the desired anodic process (1 4 5). When photoanodic decomposition of the electrode does compete, the utility of the photoelectrochemical device is limited by the photoelectrode decomposition. In a number of instances redox additives, A, have proven to be photooxidized at n-type semiconductors with essentially 100% current efficiency (1, 2, 3, 6>, ], 8, 9). Research in this laboratory has shown that immobilization of A onto the photoanode surface may be an approach to stabilization of the photoanode when the desired chemistry is photooxidation of a solution species B, where oxidation of B is not able to directly compete with the anodic decomposition of the "naked" (non-derivatized) photoanode (10, 11, 12). Photoanodes derivatized with a redox reagent A can effect oxidation of solution species B according to the sequence represented by equations (1) - (3) (10-15). [Pg.37]

The kinetic law (eqn, (5)), which was found to describe the competition between the photoanodic oxidation of TMPD and that of GaAs in water + methanol mixtures with 48 and 80 mol % CH30H and in water + acetonitrile mixture with 13 mol % CH3CN, can be interpreted on the basis of a reaction mechanism in which the subsequent electrochemical steps in the anodic decomposition of the semiconductor occur by the capture of a free hole at each step (instead of by reaction with mobile intermediates X] as was the case with the mechanisms discussed before). The oxidation of the dissol ved reducing agent occurs through reaction with X] orX OH. [Pg.109]

Photocorrosion can be prevented by adding a redox couple to the electrolyte whose potential is more favourable than the decomposition potential such that the redox reaction occurs preferentially. When n-CdS is used as photoanode in aqueous electrolytes, the electrode is photocorroded since the reaction, CdS -1- 2h - S -1- Cd, occurs readily. By adding NaOH and sodium polysuphide to the electrolyte (Ellis et al, 1976), photocorrosion is prevented. The /S redox couple preferentially scavenges the photoholes. At the anode, sulphide is oxidized to polysulphide (free sulphur) and free sulphur is reduced back at the dark cathode. Similarly n-Si anodes have been stabilized by using a nonaqueous electrolyte containing a ferricinium/ferrocene redox couple (Legg et al, 1977 Chao et al, 1983). Unfortunately, a similar stabilization technique cannot be applied to photoelectrolysis cells. Some examples of electrode... [Pg.420]

A few other applications of dithiolenes make use of their redox properties. Kumar et a/.219 proposed the use of dithiolenes as photosensitizers. Umezawa et al.22<> coated a Pt cathode with (Et4N)Ni(mnt)2 and saw a modest degree (1.4 x 10 4 %) of light conversion upon irradiation. On the opposite side, Bradley et al.721 used dithiolenes to stabilize n-type Si anodes against photoanodic decomposition. [Pg.627]


See other pages where Photoanode anodic decomposition is mentioned: [Pg.101]    [Pg.74]    [Pg.52]    [Pg.3203]    [Pg.213]    [Pg.217]    [Pg.271]    [Pg.251]    [Pg.153]    [Pg.290]    [Pg.539]    [Pg.432]    [Pg.484]   
See also in sourсe #XX -- [ Pg.91 , Pg.123 , Pg.125 , Pg.128 ]




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