Phenolic resin based negative electron beam

Phenolic Resin-Based Negative Electron-Beam Resists... [Pg.77]

From this result on MRS, we expected that a combination of phenolic-resin-based resist and aqueous alkaline developer would lead to etching-type dissolution and non-swelling resist patterns. In this paper, we report on a new non-swelling negative electron beam resist consisting of an epoxy novolac, azide compound and phenolic resin matrix (EAP) and discuss the radiation chemistry of this resist. [Pg.424]

Novolac- or phenolic resin-based resists usually show no pattern deformation induced by swelling during development in aqueous alkaline solution. Examples of such resists are naphtho-quinonediazide/novolac positive photoresists, novolac-based positive electron-beam resist (NPR) (1), and azide/phenolic negative deep-UV resist (MRS) (2). Iwayanagi et al.(2) reported that the development of MRS proceeds in the same manner as the etching process. This resist, consisting of a deep-UV sensitive azide and phenolic resis matrix, is also sensitive to electron-beams. This paper deals with the development mechanism of non-swelling MRS and its electron-beam exposure characteristics. [Pg.77]

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