Phase transformation dislocations

When the stress (compressive) rises to a value approaching G/10 near the Debye temperature, motion of gliding dislocations tends to be replaced by the formation of phase transformation dislocations. The crystal structure then transforms to a new one of greater density. This occurs when the compressive stress (the hardness number) equals the energy band gap density (gap/molecular volume). 

In 1964, two competing series of slender volumes appeared one, the Macmillan Series in Materials Science , came from Northwestern Morris Fine wrote a fine account of Phase Transformations in Comlen.ted Systems, accompanied by Marvin Wayman s Introduction to the Crystallography of Martensite Transformations and by Elementary Dislocation Theory, written by Johannes and Julia Weertman. The second series, edited at MIT by John Wulff, was entitled The Structure and Properties of Materials , and included slim volumes on Structure, Thermodynamics of Structure, Mechanical Behaviour and Electronic Properties. 

In relatively recent years, it has been found that that indentations made in covalent crystals at temperatures below their Debye temperatures often result from crystal structure changes, as well as from plastic deformation via dislocation activity. Thus, indentation hardness numbers may provide better critical parameters for structural stability than pressure cell studies because indentation involves a combination of shear and hydrostatic compression and a phase transformation involves both of these quantities. 

In the case of anthracene, the stable monoclinic phase transforms under stress to a triclinic phase in which molecules are favourably oriented for dimerization to occur. Although the triclinic phase has not been isolated as a pure phase, its structure has been established using low-temperature electron microscopy and atom-atom potential calculations (Jones Thomas, 1979). In l,8-dichloro-9-methyl anthracene, isolated dislocations with (201) [010] translation bring the molecules to the required geometry (Fig. 8.17) to facilitate photodimerization. 1, 5-dichloroanthracene is an interesting case. Instead of the expected 100% head-to-head dimers, photoreaction yields 80%... 

The various topics are generally introduced in order of increasing complexity. The text starts with diffusion, a description of the elementary manner in which atoms and molecules move around in solids and liquids. Next, the progressively more complex problems of describing the motion of dislocations and interfaces are addressed. Finally, treatments of still more complex kinetic phenomena—such as morphological evolution and phase transformations—are given, based to a large extent on topics treated in the earlier parts of the text. 

Material parameters in SCC. The susceptibility to SCC is affected by the chemical composition, the preferential orientation of grains, the composition and the distribution of the precipitates (particularly intergranular), the interaction of dislocations, the progression of the phase transformations and cold work.16... 

In the iirmedlate vicinity of the transition temperature, the free energies of the two phases are equal. The fcriiiatlon of the new phase is caused by fluctuations due to thermal excitation, which moves atoms/Ions to new positions corresponding to the new phase. Subsequent growth Involves the transfer of atoms tc the nuclei by any of the processes listed above. Grain boundaries, dislocation sites, vacancies or other imperfections facilitate diffusion to the nuclei and accelerate sintering/phase transformation [10]. 

Shock wave compression cannot only induce deformation in the form of high density of defects such as dislocations and twins but can also result in phase transition, structural changes and chemical reaction. These changes in the material are controlled by different components of stress, the mean stress and the deviatoric stress. The mean stress causes pressure-induced changes such as phase transformations while the deviators control the generation and motion of dislocations. 

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