Penetration relative depth

The attainable photocurrent under a given illumination intensity depends on the relative depth of light penetration in the semiconductor, the diffusion length of the... 

The relative depth of penetration for the surface analysis techniques discussed is shown in Fig. 14.43 for comparison. ISS is the most surface sensitive, while EPMA is the least of the techniques that have been covered. 

Penetrability is the depth, expressed in tenths of a millimeter, a standard steel needle penetrates into a bitumen sample at 25°C. The needle carries a weight of 100 g and the test is applied for five seconds. The corresponding test method is relatively difficult to carry out and is defined in France by the standard NF T 66-004, and in the USA by the method ASTM D 583. Penetration is related to the viscosity. 

Xps is a surface sensitive technique as opposed to a bulk technique because electrons caimot travel very far in soHds without undergoing energy loss. Thus, even though the incident x-rays penetrate the sample up to relatively large depths, the depth from which the electron information is obtained is limited by the "escape depth" of the photoemitted electrons. This surface sensitivity of xps is quantitatively defined by the inelastic mean free path parameter which is given the symbol X. This parameter is defined to be the distance an electron travels before engaging in an interaction in which it experiences an energy loss. 

The grounding or penetration depth of the electrical resistance in conductors is, according to Eq. (3-42), dependent on the specific resistance and the frequency. The penetration depth, t, is the distance at which the field strength has fallen by 1/e,- is the relative permeability [35] ... 

It is this increase in scattering that is detected, and this approach has been the basis for a number of devices designed to detect buried mines. However, soil penetration is relatively poor for the 60—100 keV yrays required in these devices, thus limiting their utility to shallow burial depths... 

To produce a very thick n-channel device, the resistivity of the silicon must be made relatively high, about 5,000 to 10,000 H-cm, as opposed to the 20-100 H-cm material used in standard n-channel CCDs. Higher resistivity is required for greater penetration depth of the fields produced by the frontside polysilicon wires (penetration depth is proportional to the square root of the resistivity). These thick high resistivity CCDs have been developed for detection of soft x-rays with space satellites and can be procured from E2V and MIT/LL. 

Cano Barrita [27] cast concrete specimens with w/c of 0.6, dried the specimens at 38 °C and 20% relative humidity, then measured the penetration of water in a capillary uptake type of experiment. A 3D centric scan SPRITE measurement was selected, as an image could be acquired in 150 s and the image would therefore be weighted only by the T2 decay. 3D images were acquired at various exposure times and the central 2D image slice was extracted from the data to measure the penetration depth with time. 

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