PCOR-SIMS

As a result, two additional methodologies describing site (depth)-specific RSF modifications were introduced allowing full utilization of the sensitivity/detection limits afforded by SIMS. These are described within the Lattice Valency model and the Point-by-point CORrection of SIMS profiles (PCOR-SIMS ) approach. These are covered in Sections A.9.3 and A.9.4, respectively. Although the former has found limited mention in the literature, the latter has become a commonly used/advertised protocol by the Evans Analytical Group (EAG). 

The PCOR-SIMS approach attempts to correct for both the secondary ion intensity and sputter rate variations noted over the associated transient and/or interfacial region by, first, deriving the actual sputter rates and RSFs at each point of the respective depth profile for each specific matrix as analyzed under a specific set of conditions and then, secondly, applying the derived sputter rates and RSFs on a point-by-point basis to the substrate being examined such that the appropriate corrections are applied. The first step is often aided using specifically fabricated reference materials that have been fully characterized, often by various other cross-referencing techniques. 

Owing to its initial success, the PCOR-SIMS method has since been extended to multiple different secondary ions from differing substrate types whether sputtered by Cs+ or 0+ primary ions over depths ranging from tens to thousands of nanometers in depth. In all cases, the derived results appear consistent to those relayed by MEIS, NRA, ERDA, and other cross-referencing techniques inclusive... 

AN 434. Available at http //www.eaglabs.com/documents/ule-b-implants-pcor-sims-AN434.pdf. 

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