Patterning and Assembling Behaviors

Well-resolved patterns with line widths of 1.0 xm were readily formed when a film of hb-P76 was exposed to a UV dose of 1 ]/cm2 (Fig. 12A). Patterns with submicron resolutions (line width down to 500 nm) were also achievable, as demonstrated by the examples given in panels B and C of Fig. 12. Clearly, hb-P76 is an excellent photoresist material. Similar to hb-PAAs, hb-PYs were also photosensitive. Well-resolved, defect-free pho- 

Conjugated hb-PYs constructed from the building blocks containing TPA units were found to show strong PL in solutions upon excitation [34]. Although the photoinduced cross-linking of the diyne units of hb-P20 will alter 

As described above, the fabrication of micro- and nano-sized patterns from the hyperbranched polymers as thin layers on defined matrix surfaces has been nicely accomplished. We went one step further and tried to generate free-standing three-dimensional structures. Since hb-PAAs can be readily 

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