Pattern Dependence of Dishing and Erosion Phenomena

FIGURE 4.28 The effect of Cupad size and linewidth on dishing. 

FIGURE 4.29 The effect of Cu linewidth on erosion at fixed oxide pitch of 120 pm. 

2 TaN Cap Process for Cu Corrosion Prevention and Thermal Stability Improvement 

The dishing and erosion generated by the Cu CMP process could be controlled by an appropriate Cu-to-oxide-area ratio. After Cu polishing, an IMP-TaN layer was sputtered onto the wafer surface. The overburden TaN 

30 (a) The cross-sectional view of the Cu surface capped with a very thin layer of The EDX analysis of the circled area of (a). 

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