Passivation profiles time development

Figure 15 shows the time development of a typical passivation profile (Seager and Anderson, 1988). The integral, from any depth x to infinity, of the amount by which the curve for any given time falls below the asymp-... 

Fig. 15. Typical time development of a passivation profile measured on a gold-silicon Schottky diode by the C-V method during the hydrogenation process (Seager and Anderson, 1988). Ordinate is the net density of fixed negative charge, i.e., B minus H+. Hydrogenation was at constant ion flux, 298 K, and with the gold film held at 3 V positive with respect to the silicon base. The lines are computer-generated fits to the model described in the text.

An ESA supported study was carried out for the development of an optimized code for near real time retrieval of altitude profiles of pressure, temperature (p, T) and volume mixing ratio (VMR) of five key species (O3, H20, HNO3, CH4 and N20) from infrared limb sounding spectra recorded by MIPAS (Michelson Interferometer for Passive Atmospheric Sounding), which will be operated on board ENVISAT-1 satellite. 

The anisotropic nature of the etching by RIE and DRIE is a result of the directionality of the impinging ions. Sometimes it is useful to etch very deep channels or holes. Using conventional DRIE, some tapering of the sidewall profile is expected. However, an etching process has been developed where sequential etch/passivate steps are performed. This etching process, called the Bosch process, uses conventional DRIE methods as process gases for a short period of time, interrupts... 

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