Oxygen adsorption on silicon

Having established some, at least, of the variables involved in kinetic measurements, we will attempt to evaluate the most probable adsorption model from currently available data. 

From UPS measurements, it was found that emission from gap states which are present on the clean silicon surface is suppressed by both adsorption states. There is also a sharp increase in emission between — 4 

From their XPS measurements, Chen et al. [243] also established that the O(ls) binding energy at sub-monolayer coverage was less than in 

We are now in a position to summarize the proposed adsorption models, to comment on their validity and to draw some possible conclusions to explain the widely divergent views expressed in the literature. 

From observations of either the 2p shift or this more definitive alternative, there is reasonable agreement that Si02 is only formed at elevated temperatures, or with excited oxygen or by electron irradiation of adsorbed oxygen. It may also be formed by exposure to high pressures of non-excited molecular oxygen at room temperature, but this is less clear. 

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