Oxide films vapour deposited

Thin oxide films may be prepared by substrate oxidation or by vapour deposition onto a suitable substrate. An example of the fomrer method is the preparation of silicon oxide thin-films by oxidation of a silicon wafer. In general, however, the thickness and stoichiometry of a film prepared by this method are difficult to control. 

The largest uses of platinum group metals in electronics are ruthenium for resistors and palladium for multilayer capacitors, both applied by thick film techniques . Most anodes for brine electrolysis are coated with mixed ruthenium and titanium oxide by thermal decomposition . Chemical vapour deposition of ruthenium was patented for use on cutting tools . 

An example of this process of data analysis is provided by the work of Yubero et al. (2000), who studied the structure of iron oxide thin films prepared at room temperature by ion beam induced chemical vapour deposition. Such films find important applications because of their optical, magnetic, or magneto-optical properties. They were produced by bombardment of a substrate with Oj or Oj + Ar+ mixtures, and Figure 4.15 shows RBS spectra of two iron oxide thin films prepared on a Si substrate by each of these bombardment methods. 

Gonzalez-Elipe, A.R. (2000 a) Iron oxide thin films prepared by ion beam induced chemical vapour depositions. Structural characterization by infrared spectroscopy. J. Vac. 

The rapid development of solid state physics and technology during the last fifteen years has resulted in intensive studies of the application of plasma to thin film preparation and crystal growth The subjects included the use of the well known sputtering technique, chemical vapour deposition ( CVD ) of the solid in the plasma, as well as the direct oxidation and nitridation of solid surfaces by the plasma. The latter process, called plasma anodization 10, has found application in the preparation of thin oxide films of metals and semiconductors. One interesting use of this technique is the fabrication of complementary MOS devices11. Thin films of oxides, nitrides and organic polymers can also be prepared by plasma CVD. 

Halary, E., Benvenuti, G., Wagner, F. and Hoffmann, P. (2000). Light induced chemical vapour deposition of titanium oxide thin films at room temperature. Appl. Surf. Sci. 154, 146-151. 

The water-insoluble, green NiO is obtained by thermal decomposition of NiC03 or Ni(N03)2 and crystallizes with the NaCl structure thin amorphous films of NiO exhibiting electrochromic behaviour (see Box 22.4) may be deposited by CVD (chemical vapour deposition, see Section 27.6) starting from [Ni(acac)2]. Nickel(II) oxide is antiferromagnetic... 

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