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Oxide films surfaces Impedance analysis

It is all but impossible to prepare any semiconductor electrode without some surface film being present. The III/V semiconductors, for example, will normally possess oxide films whose thickness will vary from less than 10 A to more than 40 A after exposure to air and similar observations have been reported for silicon [77], Although the capacitance of these films will normally be considerably larger than that of the depletion layer, the film may affect the a.c. response both by virtue of the analysis leading to eqn. (72) and, if Css becomes sufficiently large, that the impedance of the depletion layer falls to a value comparable with that of the film. If the film has a finite resistivity, which may be ionic in character, then the equivalent circuit takes the form... [Pg.116]


See other pages where Oxide films surfaces Impedance analysis is mentioned: [Pg.303]    [Pg.162]    [Pg.201]    [Pg.29]    [Pg.93]    [Pg.199]    [Pg.63]    [Pg.906]    [Pg.138]    [Pg.361]    [Pg.89]    [Pg.180]   
See also in sourсe #XX -- [ Pg.69 , Pg.297 ]




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