Organic thin-film transistors hole mobilities

M = Tb, Lu) into organic thin-film transistors by LB technique and reported their field effect mobility, which represented the first report for p-type OFETs based on bis(phthalocyaninato) rare earth complexes prepared via LB method [88], Due to the highly ordered molecular arrangement of M(Pc)[Pc(OC8Hi7)g] (M = Tb, Lu) in LB films and the appropriate HOMO energy level of these double-deckers relative to the Au source-drain electrodes, the OFETs reported in that work exhibited higher hole transfer mobility of 1.7 x 10-3 cm2 V-1 s-1 in comparison with those fabricated from monomeric phthalocyanine LB films. 

For several important applications in plastic optoelectronics, including the possibility of electrically pumped organic lasers, it would be very important to achieve an ambipolar operation in OFETs, with high electron and hole mobilities. Gate-controlled electroluminescence from organic small-molecule thin-film transistors... 

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