Optical Lithographic Technologies and Their Performance

As stated earlier, i-line lithography uses the emission from an Hg arc lamp at 365 nm to expose resists, mostly based on DNQ/novolac systems (see Chapter 7 

Partially coherent imaging in two dimensions and theoretical limits of projection print ing in microfabrication, IEEE Trans. Electron Dev. 27(5), 931 938 (1980). 

Bossung, Projection printing characterization, Proc. SPIE 100, 80 84 (1977). 

At the heart of dry ArF lithography lies an exposure tool equipped with ArF exciplex laser source (emitting 193-nm wavelength photons). The insertion of ArF (193-nm) lithography into production was originally expected to take place in 

Damtnel, Diazonaphthoquinone based resists, SPIE Short Course No. SC104 (2002). 

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