I-line lithography

Figure 7.9 Absorption spectrum of different polymers used in ArF, KrF, and i-line lithographies. (After R. Dammel. )...

As stated earlier, i-line lithography uses the emission from an Hg arc lamp at 365 nm to expose resists, mostly based on DNQ/novolac systems (see Chapter 7... 

Although originally developed for i-line lithography, the CARL process has been extended to ArF lithography. ... 

Azide-phenolic resin photoresists have been reported by workers at Hitachi. They are used for i-line (12) or for deep UV light (13), and the applications to KrF excimer laser lithography have not been demonstrated. 

C.F. Lyons, R.K. Leidy, and G.B. Smith, Practicing the top antireflector process, Proc. SPIE 1674, 523 (1992) M. Gehm, P. Jaenen, V. van Driessche, A.M. Goethals, N. Samarakone, L. Van den Hove, and B. Denturck, Evaluation of methods to reduce line width variation due to topography for i line and deep UV lithography, Proc. SPIE 1674, 681 (1992). 

Levinson, Principles of Lithography, 2nd ed., p. 162, SPIE Press, Bellingham, WA (2005). Software is often used to compensate for the effects of lens heating, see for example, P. van Oorshot, B. Kock, J. van der Spek, E. Stuiver, H. Franken, H. Bother, and R. Garreis, Performance of an I line step and scan system for suh 0.25 p,m mix and match apphcation, Proc. SPIE 3334, 423 436(1998). 

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