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NITRIDES size effects

In compositional analysis of very small precipitates, or in interface segregation studies, using a probe-hole type atom-probe, one is always faced with the fact that the probe-hole may cover both the matrix and the precipitate phases, or the interface as well as the matrix. Thus any abrupt compositional changes will be smeared out by the size of the probe-hole and also by the effect of ion trajectories. A similar uncertainty seems to exist in the compositional analysis of nitride platelets formed in nitrided Fe-3 at.% Mo alloy, aged between 450 and 600°C, where Wagner ... [Pg.336]

Aluminum nitride is most commonly used for its high thermal conductivity. Recently, a poreless composite material, TiAl-TiB2-AlN, was obtained by reacting a Ti-F(0.7-0.95)A1+(0.05-0.50)8 mixture at 30- to 100-atm nitrogen pressure (Yamada, 1994). The use of high-pressure nitrogen gas was found to be effective for simultaneous synthesis and consolidation of nitride ceramics with dispersed intermetallic compounds (e.g., TiAl). Dense, crack-free products with uniform grains (approximately 10 mm in size) were obtained. [Pg.111]

The dependence of combustion temperature and velocity for the Si-N2 system as a function of dilution with /3-Si3N4 powder is shown in Fig. 38. In this case, at constant gas pressure, remains constant and is equal to the dissociation temperature of silicon nitride, for dilutions up to 60 wt %. However, with increasing dilution, the combustion front velocity increases. Also, increasing the overall heat evolution, smaller dilution by nonmelted nitride powder promotes coalescence of liquid Si particles, leading to an increase in the average reactant particle size, as well as to formation of thin liquid Si films, which blocks nitrogen infiltration to the reaction zone (Mukasyan et al, 1986). The same effects were also observed for the AI-N2 and B-N2 systems (Mukasyan, 1994), which are characterized by dissociation of the final product in the combustion wave. [Pg.160]

The main effects of the HT-HP tretitment are the following a decreased Si/SiNx interface roughness and improved uniformity of the layer thickness, a decreased concentration and dimensions of defects at the top silicon layer and the substrate, a suppressed formation of exfoliation defects in the top silicon layer, a decreased size of silicon nanocrystals at the Si/SiNx interface and nitride nanocrystals within amorphous SiN. [Pg.252]


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See also in sourсe #XX -- [ Pg.410 ]




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