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Poly negative working resist

The surface photo absorption for contrast enhancement (SPACE) process has been recently reported for use with a negative-working electron-beam resist (42). By addition of a controlled UV-flood exposure step, enhancements in both contrast and sensitivity of MRS RD2000N resist, a negative working resist composed of poly(p-hydroxystyrene) and 3,3 diazido-diphenylsulfone, have been obtained. However, its application is iimited to negative working resists. [Pg.464]

Hiraoka,H Chiong,K.N. (1987) Arylo3qr-poly(phosphazenes) as negative working oxygen reactive ion etching resistant resist materials, J.Vac.Sci.Technol., B 5(1),386. [Pg.294]

See other pages where Poly negative working resist is mentioned: [Pg.458]    [Pg.461]    [Pg.601]    [Pg.297]    [Pg.374]    [Pg.667]    [Pg.238]    [Pg.981]    [Pg.601]    [Pg.174]    [Pg.496]    [Pg.460]    [Pg.359]    [Pg.967]    [Pg.990]    [Pg.100]    [Pg.50]    [Pg.327]    [Pg.358]    [Pg.154]    [Pg.45]    [Pg.9]    [Pg.166]    [Pg.71]    [Pg.403]    [Pg.255]    [Pg.323]    [Pg.339]    [Pg.11]    [Pg.495]    [Pg.162]   
See also in sourсe #XX -- [ Pg.372 , Pg.374 ]



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