Negative electron-beam resists characteristics

Novolac- or phenolic resin-based resists usually show no pattern deformation induced by swelling during development in aqueous alkaline solution. Examples of such resists are naphtho-quinonediazide/novolac positive photoresists, novolac-based positive electron-beam resist (NPR) (1), and azide/phenolic negative deep-UV resist (MRS) (2). Iwayanagi et al.(2) reported that the development of MRS proceeds in the same manner as the etching process. This resist, consisting of a deep-UV sensitive azide and phenolic resis matrix, is also sensitive to electron-beams. This paper deals with the development mechanism of non-swelling MRS and its electron-beam exposure characteristics. 

We have developed a new silicone based negative resist (SNR) by introducing the chloromethyl group into polydiphenylsiloxane. SNR has a high Tg (170 C), good electron beam sensitivity and excellent durability to 02 RIE (9). In this paper we describe the SNR preparation and characteristics, and demonstrate a high resolution of 2LR system using this resist. 

Characteristics of a l vo-Layer Resist System Using Silicone-Based Negative Resist for Electron-Beam Litht raphy... 

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