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Negative bonding defect

Note that the actual bonding condition is three-dimensional. In both of these cases, rotation of a water molecule results in either a positive or negative bonding defect which is electrically active. In the first case, a... [Pg.306]

Fig. 15.5 Models of the electronic DoS in amorphous materials leading to a pinning of the Fermi level at midgap. a Cohen-Fritzshe-Ovshinsky model with overlapping band tails, b dangling bond model, and c negative U defect model with charged defects (adapted from [25])... Fig. 15.5 Models of the electronic DoS in amorphous materials leading to a pinning of the Fermi level at midgap. a Cohen-Fritzshe-Ovshinsky model with overlapping band tails, b dangling bond model, and c negative U defect model with charged defects (adapted from [25])...
The second class of atomic manipulations, the perpendicular processes, involves transfer of an adsorbate atom or molecule from the STM tip to the surface or vice versa. The tip is moved toward the surface until the adsorption potential wells on the tip and the surface coalesce, with the result that the adsorbate, which was previously bound either to the tip or the surface, may now be considered to be bound to both. For successful transfer, one of the adsorbate bonds (either with the tip or with the surface, depending on the desired direction of transfer) must be broken. The fate of the adsorbate depends on the nature of its interaction with the tip and the surface, and the materials of the tip and surface. Directional adatom transfer is possible with the apphcation of suitable junction biases. Also, thermally-activated field evaporation of positive or negative ions over the Schottky barrier formed by lowering the potential energy outside a conductor (either the surface or the tip) by the apphcation of an electric field is possible. FIectromigration, the migration of minority elements (ie, impurities, defects) through the bulk soHd under the influence of current flow, is another process by which an atom may be moved between the surface and the tip of an STM. [Pg.204]

CH3 -Zn with superstoichiometric (defect) zinc atoms (Zn -impurity centres of conductivity). The larger is the electric positivity of the metal in these complexes, the larger is the ionicity of the carbon-metal bond, carbon being at the negative end of the dipole. Thus, in the case of C - K bond, ionicity amounts to 51%, whereas for C - Mg and C - Zn bonds ionicity amounts to 35% and 18%, respectively [55]. Consequently, metalloorganic compounds are characterized by only partially covalent metal-carbon bonds (except for mercury compounds). [Pg.265]

Fig. 4.4 Molecular model of (a) surface containing positive and negative curvature induced by a pentagon (red) and a heptagon (blue), respectively (b) molecular model of 5-7 defects (yellow) and a Thrower-Stone-Wales defect (green) [82] (c) high-resolution transmission electron microscopy (HRTEM) images of bond rotations V2 (555-777) divacancy, and (d) V2(5555-6-7777) divacancy within graphene scale bar is 1 nm [75]. Fig. 4.4 Molecular model of (a) surface containing positive and negative curvature induced by a pentagon (red) and a heptagon (blue), respectively (b) molecular model of 5-7 defects (yellow) and a Thrower-Stone-Wales defect (green) [82] (c) high-resolution transmission electron microscopy (HRTEM) images of bond rotations V2 (555-777) divacancy, and (d) V2(5555-6-7777) divacancy within graphene scale bar is 1 nm [75].

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