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Modified switching device model

The input (gate-source) circuit of a MOSFET is simply illustrated by a capacitor The output (drain-source) circuit is expressed by an equivalent resistor and a capacitor The resistance of the equivalent resistor R  [Pg.316]

In a high-voltage region (Vcs Vif), the lo-Vcs characteristic can be expressed by the following linear equation  [Pg.317]

In a low-voltage region (VQs Vif), the characteristic is approximated by a quadratic function  [Pg.317]

The coefficient fl is obtained by a condition in which the both curves are in contact at Vqs=Vih- [Pg.317]

The on-resistance taken from the data sheet of the MOSFET is shown in Table 4.7. [Pg.319]


See other pages where Modified switching device model is mentioned: [Pg.12]    [Pg.352]    [Pg.316]    [Pg.12]    [Pg.352]    [Pg.316]    [Pg.59]    [Pg.185]    [Pg.79]    [Pg.325]    [Pg.198]    [Pg.294]   
See also in sourсe #XX -- [ Pg.316 ]




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