Modelling of Electronic Structure in the

We find that we can similarly model the range in properties of the solitons formed by charge injection into the accumulation region of the MIS and MISFET structures. The accumulation layer in the MIS structure is very closely localised to the interface with the insulator. For silicon-based MISFET inversion layer structures, typical confinement distances are of order 2 nm [68] and we can expect values here to be no larger for the polyacetylene devices. We can therefore expect that the accumulation layer will be very sensitive to the local structure of the polymer at the interface with the insulator. We consider that in the case where this is silicon dioxide, the polymer surface layer is significantly more disordered than in the bulk of the polymer. In contrast, where the 

Tdie 1 Parameters obtained from absorption and i toinduced absoiptirai measurements and from electroabsoiption measurements on MIS and MISFET structures. 

The MIS Field Effect Transistor, or MISFET, operates by modulation of the conductance of the semiconductor in the depletion, accumulation or inversion modes, with 

For low values of V js, well below the level for pinch-off, gm gives a direct measure of the carrier mobility, through the relation 

The saturation current, Ijat. for the channel at high values of Yds is conventionally modelled by the relation 

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