Micro dielectric spectroscopy

Raman (Micro-) Spectroscopy Dielectric Spectroscopy Small key metabolites... 

For the case of interconnect line features patterned on a single crystal Si substrate, a common procedure for the use of micro-Raman spectroscopy entails determination of the stress in the interconnect from the distortion produced in the substrate and the dielectric which immediately surround the interconnect (DeWolf et al. (1992) Ma et al. (1995) DeWolf et al. (1999)) the Raman spectra can be measured in the backscattering mode using an argon laser. The piezo-spectroscopic shift in the Raman spectrum, which is induced by such local distortions, can be measured to a spatial resolution on the order of 1 pan. so that stress in individual lines can be estimated. 

A drawback of this method is that micro-Raman spectroscopy cannot generally be applied to metallic materials. Furthermore, stress estimation can only be made on the basis of Raman spectra gathered in the substrate and the dielectric on the sides of the interconnect lines. Such measurements cannot be made in the region immediately below the line, where the stress is more uniform and more sensitive to the stress in the lines themselves, if the substrate is nontransparent. Despite these limitations, the micro-Raman spectroscopy method has been successfully used to infer the average values of internal stress components in interconnect lines tested in the as-fabricated condition as well as after electromigration testing (Ma et al. (1995) DeWolf et al. (1999)). 

Macromolecular Chemistry Physics 202, No.16, 7th Nov. 2001, p.3228-33 CHARACTERIZATION OF THE CROSSLBVKING KINETICS OF A THIN POLYMERIC LAYER BY REAL-TIME DIELECTRIC RELAXATION SPECTROSCOPY Schonhals A Fritz A Pfeiffer K Berlin,University Micro Resist Technology GmbH... 

---