MeV-SIMS

Using ion implantation in GaN, Zolper et al reported n-type doping with oxygen and obtained a relatively shallow donor level at 29 meV [4], SIMS measurements did not show any measurable redistribution with rapid thermal annealing (RTA) at 1125°C. However, the activation efficiency of the implanted dopants was very poor. 

HVPE GaN films are known from SIMS measurements to contain Si and O as dominant impurities, and a comparison with results obtained on Si-doped GaN [264] has led Moore et al. [171] to identify tentatively the 31.1 meV donor... 

A good linear correlation was found between the integrated absorption of the strongest RT line centred at 347 meV and the neutral acceptor concentration obtained from Hall effect measurements of five natural lib diamonds [43]. This was later converted into a RT calibration factor of this band of 1 x 1014 cm-1, assumed to be valid for B concentrations up to a few 1018 cm-3. For larger B concentrations going up to 1 x 102°cm 3, a calibration factor of about one order of magnitude larger was obtained by correlation with SIMS measurements on CVD diamonds [64], These calibration factors are discussed in the review by Thonke [177],... 

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