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Memory storage time

Figure 4.34 Timing specification for a semi-Gaussian pulse and its digitization. The pulse threshold may be the same as the LLD Tp, peaking time TIg. linear gate time Tp, fall time Tw, pulse width, threshold to threshold 7h, ADC conversion time (digitization time) memory storage time + s... Figure 4.34 Timing specification for a semi-Gaussian pulse and its digitization. The pulse threshold may be the same as the LLD Tp, peaking time TIg. linear gate time Tp, fall time Tw, pulse width, threshold to threshold 7h, ADC conversion time (digitization time) memory storage time + s...
The memory storage time (Tf) - also called the memory cycle time. [Pg.87]

While the amplifier imposes an extending dead time on the pulse stream, that is not the case for the ADC, which gives a non-extending dead time, determined by the extra time needed to perform the pulse height measurement and memory storage time. The amplifier and MCA dead time operate in series and can be represented mathematically in a variation of Equation (14.4) ... [Pg.290]

We can also estimate the required computational work. Since the evolution time of the LG is of order Ljv and the time required to update a single step on the lattice is of order Iq/cs, the LG simulation requires roughly L/[IqM) = TZ/M time steps. Assuming that the computational work for each site is of order 1, we have that the LG simulation therefore requires a memory storage space of order S (TZ/M) and a computational work requirement of order W 7 d+l/ d+2... [Pg.506]

Bontempi, B., Luanrant-Demir, C., Destrade, C. and Jaffard, R. Time-dependent reorganization of brain-circuitry underlying long-term memory storage. Nature 400 671-675,1999. [Pg.873]

From the table, we can see that the first-order method usually requires fewer floating-point operations and memory storage if compared with the Primal-Dual interior-point method. The unique drawback of the former method is that we cannot guarantee a convergence of the method in a certain time frame. [Pg.117]

System performance requirements (e.g., timing, memory storage, availability, and spare capacity)... [Pg.524]

The long-term interest, as far as the applied physicist is concerned, lies in the possible uses of supermolecular assemblies for memory storage, molecular switching, and superconducting devices. However, at the present time, potential improvement areas are where monomolecular films show most promise and where the prospects of commercial exploitation seem reasonable in the medium term. A few of these areas are described in this section most of the illustrations are based on work carried out in my research laboratories. These potential improvement areas are grouped into three categories, but most of the emphasis is placed on utilizing the nonlinear properties of LB films. [Pg.243]

I don t know. It was a humiliating, dismaying admission, especially to make to his former peers. But Rubra had immediately made the connection between Marie Skibbow and Anders Bospoort, in whose apartment Dariat s corpse had been found. Such a chain of events worried him enormously. But his supposedly infallible memory storage facility had failed him utterly. After Marie and Anders had gone down the starscraper that first time they had simply vanished from his perception and the sub-routine in the starscraper hadn t noticed their absence. Nor could he locate them now, not even with his perception sub-routines expanded and upgraded with a new batch of safeguards. [Pg.175]

The Newton-Raphson (NR) algorithm not only applies the gradient (first derivative) but also the second derivative to predict the curvature of the function or, in other words, to predict where the function will pass through a minimum. Because NR performs best at harmonic surfaces, it is far from ideal to use NR for systems far from the minimiun. In addition, the calculation of the second derivatives (Hessian matrix) is costly in computer time and requires additional memory storage and is therefore only suited for molecular systems of limited size. [Pg.114]

Information storage in magnetic memories needs intermediate magnetic hardness. If the coercive force is too low (as in soft ferromagnets) there is loss of memory with time because the polarization is low and easily changed. If the polarized material is too hard the information is difficult to replace. [Pg.152]


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