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Mean square electric field

As was discussed above, the surface selection rule arises because of the reduction in magnitude of the mean square electric field strength, < >, of... [Pg.108]

Fig. 9.2 Angular dependences of the phase shift (a), mean square electric field strength (MSEFS) (b), and reflectivity (c) for an air/Au interface at 1500 cm Optical constants for gold at this wavenumber are n = 3.04, /c=45.25. Fig. 9.2 Angular dependences of the phase shift (a), mean square electric field strength (MSEFS) (b), and reflectivity (c) for an air/Au interface at 1500 cm Optical constants for gold at this wavenumber are n = 3.04, /c=45.25.
Quantitative analysis of the orientation of organic molecules at the metal electrode requires precise knowledge of the mean square electric field strength (MSEFS) at the metal surface and in the bulk of the thin-layer cavity. The tangential (with respect to the propagation direction) fields l/k(z) and Vk(z) at an arbitrary point within the stratified medium are related to the fields Ut and Vi at the first interface (z=Zi=0) by the following matrix ... [Pg.324]

Fig. 9.5 Mean square electric field strength at the metal surface for a p-polarized beam as a function of the angle of incidence and the thin.cavity (gap) thickness. Calculate for the convergent ( 6°) radiation of 1600 cm" . For stratified medium Cap2/D20/Au. Fig. 9.5 Mean square electric field strength at the metal surface for a p-polarized beam as a function of the angle of incidence and the thin.cavity (gap) thickness. Calculate for the convergent ( 6°) radiation of 1600 cm" . For stratified medium Cap2/D20/Au.
Figure 1.15. External reflection. Influence of angle of incidence on (a, b) mean-square electric fields (E ) and (c, d) normalized mean-square electric fields (E )sec >i at 1000 cm" inside model organic layer 5 nm thick (02 = 1.5 and k2 =0.1) located at boundaries (a, c)air-Si (solid line) and water-Si (dashed line) and b, d) air-water. Optical constants of water and Si indicated in Table 1.1. Figure 1.15. External reflection. Influence of angle of incidence on (a, b) mean-square electric fields (E ) and (c, d) normalized mean-square electric fields (E )sec >i at 1000 cm" inside model organic layer 5 nm thick (02 = 1.5 and k2 =0.1) located at boundaries (a, c)air-Si (solid line) and water-Si (dashed line) and b, d) air-water. Optical constants of water and Si indicated in Table 1.1.
Figure 1.16. Mean-square electric field E )) as function of coordinate z in systems (a) air-organic film-Si, y>i=55° (to) air-organic film-AI, y>i=80° and (c) Si-organic film-water, =21°. Inset shows decay of tangential MSEFs in Al. Frequency of incident radiation is 1000 cm". Coordinate system is shown in Fig. 1.14. Parameters of film are as in Fig. 1.15. To gain a better demonstrativeness, segments of z-axis in medium of incidence, within film, and in output medium are represented in different scales. Figure 1.16. Mean-square electric field E )) as function of coordinate z in systems (a) air-organic film-Si, y>i=55° (to) air-organic film-AI, y>i=80° and (c) Si-organic film-water, =21°. Inset shows decay of tangential MSEFs in Al. Frequency of incident radiation is 1000 cm". Coordinate system is shown in Fig. 1.14. Parameters of film are as in Fig. 1.15. To gain a better demonstrativeness, segments of z-axis in medium of incidence, within film, and in output medium are represented in different scales.
Figure 1.20. ATR. Normalized mean-square electric fields in model organic film 1 nm thick deposited at Ge (solid lines) and quartz (dashed lines) IREs. Optical parameters are as in Fig. 2.23. Figure 1.20. ATR. Normalized mean-square electric fields in model organic film 1 nm thick deposited at Ge (solid lines) and quartz (dashed lines) IREs. Optical parameters are as in Fig. 2.23.
NMSEF normalized mean-square electric field... [Pg.745]

Fig. 3 Change of the mean square electric field for the air/metallic surface with the incidence angle. The simulation parameters are shown in the figure. Fig. 3 Change of the mean square electric field for the air/metallic surface with the incidence angle. The simulation parameters are shown in the figure.
Fig. 5 Change of the intensity of the reflected mean square electric field with the distance from the reflecting surface for the s- and p-polarized radiation. Fig. 5 Change of the intensity of the reflected mean square electric field with the distance from the reflecting surface for the s- and p-polarized radiation.
Since the intensity of the light is directly proportional to the mean square electric field strength, (E ), we can derive from Beer s law [/ = /ocxp (-az)] the following expression for the absorption coefficient a ... [Pg.89]


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See also in sourсe #XX -- [ Pg.8 , Pg.9 , Pg.55 , Pg.98 , Pg.99 ]




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