Low Energy Electron Microscopy LEEM

It has also been shown that sufiBcient surface self-diflfiision can occur so that entire step edges move in a concerted maimer. Although it does not achieve atomic resolution, the low-energy electron microscopy (LEEM) technique allows for the observation of the movement of step edges in real time [H]. LEEM has also been usefiil for studies of epitaxial growth and surface modifications due to chemical reactions. 

In this section, we analyze experiments on the relaxation of non-equilibrium Si(OOl) [12, 25] and Ge(OOl) [24] morphologies to extract values for the step-mobility as a function of temperature. Mobilities derived from the relaxation experiments are compared to more direct measurements of step-mobilities using low energy electron microscopy (LEEM) [26] and STM [27,28]. 

Bartelt and Tromp [26] have recently described direct measurement of step-mobilities using low energy electron microscopy (LEEM). We include their data for Si(OOl) in Fig. 6. 

Recent low energy electron microscopy (LEEM) studies, while confirming that the Cu coverage in the c(4x4) surface alloy is 0.5 ML, have reported that during the proposed de-alloying transition, the amount of Cu... 

Low-energy electron microscopy (LEEM) image single monolayer of graphene on SiC(OOOI), diameter 20 pm. Reprinted with permission from Physical Review B 78 (2008), 245403. 2008 American Physical Society (Virojanadara etal., 2008). 

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