Low energy electron-enhanced etching

Gillis H P, Choutov D A, Steiner P A IV, Piper J D, Crouch J H, Dove P M and Martin K P 1995 Low energy electron enhanced etching of Si(IOO) in hydrogen-helium DC plasma App/. Phys. Lett. 66 2475-7... 

Gillis H P, Choutov D A, Martin K P, Pearton S J and Abernathy C R 1996 Low energy electron enhanced etching of GaN/Si in hydrogen DC plasma J. Electrochem. Soc. 143 L251-4... 

Low energy electron-enhanced etching (LE4) uses a DC plasma in which electrons with energies <15 eV and reactive species at thermal velocities are incident on a sample. The sample is also heated at temperatures ranging from 50 to 250°C. Gillis et al [26,27] used hydrogen and chlorine plasmas to produce highly anisotropic etch profiles and smooth etch surfaces, at etch rates of 50 - 70 nm/min. 

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