Lithographic studies

A variety of alternating copolymers based on H-allyl- and N-(3-ethynylphenyl)maleimides, with substituted styrenes and vinyl ethers, have been prepared and their response to x-ray irradiation studied. Broadband and monochromatic x-ray exposures were conducted at the Stanford Synchrotron Radiation Laboratory. Sensitivities were observed to correlate with mass absorption coefficients of the copolymers and were found to be as high as 5-10 mJ/cm2. Preliminary fine line lithographic studies indicate 0.5 ion resolution capabilities. 

The TT-electron system-substituted organodisilanes such as aryl-, alkenyl-, and alkynyldisilanes are photoactive under ultraviolet irradiation, and their photochemical behavior has been extensively studied (1). However, much less interest has been shown in the photochemistry of polymers bearing TT-electron substituted disilanyl units (2-4). In this paper, we report the synthesis and photochemical behavior of polysiloxanes involving phenyl(trimethylsilyl)-siloxy units and silicon polymers in which the alternate arrangement of a disilanylene unit and a phenylene group is found regularly in the polymer backbone. We also describe lithographic applications of a double-layer system of the latter polymers. 

Much less work has been focused on the effect of polymer structure on the resist performance in these systems. This paper will describe and evaluate the chemistry and resist performance of several systems based on three matrix polymers poly(4-t-butoxycarbonyloxy-a-methylstyrene) (TBMS) (12), poly(4-t-butoxycarbonyloxystyrene-sulfone) (TBSS) (13) and TBS (14) when used in conjunction with the dinitrobenzyl tosylate (Ts), triphenylsulfonium hexafluoroarsenate (As) and triphenylsulfonium triflate (Tf) acid generators. Gas chromatography coupled with mass spectroscopy (GC/MS) has been used to study the detailed chemical reactions of these systems in both solution and the solid-state. These results are used to understand the lithographic performance of several systems. 

Ultrathin LB PMMA and novolac/diazoquinone films have been demonstrated to act as high resolution electron beam and optical resists, respectively. Structural rearrangements in the LB PMMA films have been observed by using fluorescence spectroscopy. However, this rearrangement did not appear to influence the lithographic performance when seven or more layers of LB PMMA films were used as the resist. A more comprehensive study of the relationship between lithographic performance and LB film structure is currently underway. 

Ross, D. (1996) Metabolic basis of benzene toxicity. Eur. J. Haematol, SI (Suppl.), 111-118 Saito, T. Takeichi, S. (1995) Experimental studies on the toxicity of lithographic developer... 

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