LEDs light-emitting

LED Light emitting diode MAP Microwave-assisted Process ... 

Although the element is a metalloid, the long, brittle, crystals have a metallic shine. The white, tasteless oxide (arsenic trioxide As203) has been famous and notorious ("inheritance powder") even after centuries traces can be found in bodies. The arsenic compound "Salvarsan" was first used by Paul Ehrlich for the treatment of syphilis — the start of chemotherapy. Popular today as a semiconducting material. Component of LEDs (light-emitting diodes) and lasers. Arsenic hardens lead, used earlier in letter-press printing, today only for lead shot. 

Figure 11.15. Schematics of the optical arrangement and temperature probes for the Cr+ fluorescence lifetime-based fiber optic thermometers. F = short-pass optical filter Fa = bandpass or long-pass optical filter LD = laser diode LED = light emitting diode S = the fluorescence material used as sensing element vm = signal to modulate the output intensity of the excitation light source v/= the detected fluorescence response from the sensing element.

GaAs is expected to be used for ICs (Integrated Circuit), FETs (Field Effect Transistor), LEDs (Light Emitting Diode), semiconductor lasers, and as the base material for IC. To put GaAs to practical use, the following points have to be examined in detail ... 

Fig. 8.7. Experimental arrangement for intensity modulated photocurrent spectroscopy (IMPS). FRA frequency response analyser. LED light emitting diode.

Rhenium(I) tricarbonyl-2,2 -bipyridine moieties were used to cap both ends of a poly fluorine, yielding Re-capped Re(bpy)(CO)3(py)-X-(py)(CO)3(bpy)Re 2+ polymers, where X = polyfluorene [51, 52], The polymers with and without the Re caps were spin-coated from their solutions in CH2C12 onto an ITO surface previously modified with a layer of poly(styrene sulfonic acid), doped with poly(ethylenedioxythiophene). The LED (light-emitting device) was then topped with a layer of Ca/Al. The photoluminescence (PL) and electroluminescence seen were consistent with the presence of [Re(bpy)(CO)3(py)]+ [158],... 

Fig. 3. Exploded view of the thin film spectroscopy apparatus, showing the relative positions of the optical cooling surface, the interferometer, the optical pathway for measurement and the material source for the film. W, window (polished quartz or sapphire), O, ground surface onto which windows are glued, LED, light emitting diode, PD, photodiode...

Ka = Acidity constant cm = Centimeter en = Ethylendi-amine LD50 = 50% of a lethal dose Et = ethyl i-Bn = Isobutyl hep = Hexagonal close packed i-Pr = Isopropyl LED = Light-emitting diode Me = Methyl MOCVD = Metalorganic chemical vapor deposition E° = Normal standard potential NMR = Nuclear magnetic resonance n-Bu = n-butyl n-Pr = n-propyl OEP = Octaethylporphyrin i-Bu = Tert-butyl THE = Tetrahydrofurane TPP = Tetraphenylporphyrin V = Volt. 

CVD = chemical vapor deposition DH = double heterostructure H = homojunction device ITO = indium tin oxide LEDs = light emitting diodes LPE = liquid phase epitaxy MBE = molecular beam epitaxy MOCVD = metal organic chemical vapor deposition PPV = p-phenylenevinyl-ene PEDOT = polyethylene dioxythiophene TFEL = Thin film electroluminescent VPE = vapor phase epitaxy. 

Dendritic LEDs (light-emitting diodes) can also be prepared by attaching hole transporting triaryl-amines to the periphery of dendrimers bearing fluorescent cores.120 145 147,461 Moore and co-workers120... 

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