Lattice defects screw

The lattice defects are classified as (i) point defects, such as vacancies, interstitial atoms, substitutional impurity atoms, and interstitial impurity atoms, (ii) line defects, such as edge, screw, and mixed dislocations, and (iii) planar defects, such as stacking faults, twin planes, and grain boundaries. 

Lattice defects are holes within the lattice due to missing ions. The missing ions leave the lattice with unbalanced charges. Charge imbalances can also arise in crystal structures due to dislocations. There are two types of dislocations. In the screw dislocation a section of a crystal is skewed one atom spacing. In the edge dislocation an extra plane of atoms has been inserted into a section of a crystal. The charge imbalances arise at the sites of the dislocations. 

A helical director field also occurs in the chiral smectic-C phase and those smectic phases where the director is tilted with respect to the layer normal (Figure 1.13(c)). In these cases, the pitch axis is parallel to the layer normal and the director inclined with respect to the pitch axis. Very complicated defect structures can occur in the temperature range between the cholesteric (or isotropic) phase and a smectic phase. The incompatibility between a cholesteric-like helical director field (with the director perpendicular to the pitch axis) and a smectic layer structure (with the layer normal parallel or almost parallel to the director) leads to the appearance of grain boundaries which in turn consist of a regular lattice of screw dislocations. The resulting structures of twist grain boundary phases are currently extensively studied. The state of the art in this topical field is summarized in Chapter 10. 

A single crystal can display one-dimensional lattice defects such as edge and screw dislocations and dislocation rings. The probability of forming holes is increased at the site where an edge dislocation ends in the surface. Steps extend from screw dislocations emerging at the surface rise to etch pits. 

The other major defects in solids occupy much more volume in the lattice of a crystal and are refeiTed to as line defects. There are two types of line defects, the edge and screw defects which are also known as dislocations. These play an important part, primarily, in the plastic non-Hookeian extension of metals under a tensile stress. This process causes the translation of dislocations in the direction of the plastic extension. Dislocations become mobile in solids at elevated temperamres due to the diffusive place exchange of atoms with vacancies at the core, a process described as dislocation climb. The direction of climb is such that the vacancies move along any stress gradient, such as that around an inclusion of oxide in a metal, or when a metal is placed under compression. 

This type of volume defect in the crystal is known as a "screw dislocation", so-called because of its topography. Note that the spiral dislocation of the growing lattice deposits around the Une defect at right angles to the line defect. 

The electrocrystallization on an identical metal substrate is the slowest process of this type. Faster processes which are also much more frequent, are connected with ubiquitous defects in the crystal lattice, in particular with the screw dislocations (Fig. 5.25). As a result of the helical structure of the defect, a monoatomic step originates from the point where the new dislocation line intersects the surface of the crystal face. It can be seen in Fig. 5.48 that the wedge-shaped step gradually fills up during electrocrystallization after completion it slowly moves across the crystal face and winds up into a spiral. The resultant progressive spiral cannot disappear from the crystal surface and thus provides a sufficient number of growth... 

The structure and stability of ceria films grown on mismatched substrates have been studied computationally. A 36% lattice mismatch in growth of CeO on YSZ is found to be accommodated by the formation of islands and dislocation arrays such as edge and screw dislocations. A configuration obtained by simulation is shown in Fig. 9.2 and demonstrates the complexity of defect structures that might... 

Line defects (dislocations) are produced by slippage or shear of the crystal lattice. If the slippage is perpendicular to a face of the crystal so that the lattice planes on either side of the dislocation are parallel but displaced with respect to one another, the defect is called an edge dislocation. If the slippage is angular, as if produced by rotation about the shear axis so that lattice planes on either side of the defect are not perpendicular, the defect is called a screw dislocation. 

The large vacancy clusters are called voids. At higher temperatures these voids may collapse and form loops. These loops may be regarded as a special type of dislocation. Dislocations are present in every non-ideal material and determine its mechanical properties. The two main types are the edge and the screw dislocations. Defects are called edge dislocations when one plane of atoms in the lattice is missing or supernumerary screw dislocations are formed when a part of the crystal is displaced by an atomic layer. Fig. 14 illustrates the two types of dislocation. 

From atomistic aspects, a metal can be considered as a fixed lattice of positive ions permeated by a gas of free electrons [1], Positive ions are the atomic cores, while the electrons are the valence electrons. Since there are about 1022 atoms in 1 cm3 of a metal, one can expect that some atoms are not exactly in their right place. Thus, one can expect that a real lattice will contain defects (imperfections). The most common defects are point defects (e.g. a vacancy, an interstitial) and dislocations (e.g. the edge dislocation, screw dislocation) [2]. 

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