Kinetic studies with alternative evolution

This approach was successfully used in modeling the CVD of silicon nitride (Si3N4) films [18, 19, 22, 23]. Alternatively, molecular dynamics (MD) simulations can be used instead of or in combination with the MC approach to simulate kinetic steps of film evolution during the growth process (see, for example, a study of Zr02 deposition on the Si(100) surface [24]). Finally, the results of these simulations (overall reaction constants and film characteristics) can be used in the subsequent reactor modeling and the detailed calculations of film structure and properties, including defects and impurities. 

Complex formation changes the chemical environment with respect to the individual components. The atomic resolution provided by solution NMR allows the study of the formation of alternative complexes between the same components and to follow its time evolution, thus providing information on the kinetics and thermodynamics of the different complexes. 

Alternatively, descriptions of the time evolution of concentration can be obtained by mathematical integration of the kinetic laws rather than from the study of the variation of concentration with time. From this, it is possible to predict the concentrations of reactants or products from the initial rate at any instant during the reaction. These can be compared with the experimental results. We should note, however, that there are cases in which the kinetic law is very complex, such that its analytical integration is very difficult or even impossible. In these cases it is still possible to resort to numerical integration. 

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