Key Requirements for Ternary Substrates and Crystal-Growth Process

Key Requirements for Ternary Substrates and Crystal-Growth Process 

For ternary substrates to be commercially viable in semiconductor device technology, many important criteria must be met. These criteria pose numerous 

The spatial compositional variations must be less than 0.5 mol% from center to edge of the wafers. 

The wafers should be completely free from cracks, metallic inclusions or multiphase regions and have a dislocation density similar to that in existing high-quahty commercial binary substrates (less than 1000 cm ). 

The wafer should have a high-quaUty epitaxial-growth-worthy polished and chemically treated surface. Some substrate materials such as aluminum-based compounds have highly reactive (oxidizable) surfaces and are generally not suitable for epitaxial growth. 

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