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Ion Spectroscopy SIMS, LEIS, RBS

Secondary ion mass spectrometry (SIMS) is by far the most sensitive surface technique, but also the most difficult to quantify. When a surface is exposed to a beam of ions (Ar , 0.5-5 keV), energy is deposited in the surface region of the sample by a collisional cascade. Some of the energy will return to the surface and stimulate the ejection (desorption) of atoms, ions, and multi-atomic clusters. In SIMS, positive or negative secondary ions are detected directly with a quadrupole mass spectrometer. [Pg.150]

SIMS is strictly speaking a destructive technique. In the dynamic mode, used for making concentration depth profiles, several tens of monolayers are removed per minute. In the static limit, which is used to study adsorbed molecules, the rate of removal corresponds to less than one monolayer per hour, implying that the surface [Pg.150]

Structure does not change during the measurement. In this case the molecular ion fragments are indicative of the chemical structure of the surface. [Pg.151]

The advantages of SIMS are its high sensitivity (detection limit of ppms for certain elements), its ability to detect hydrogen and the emission of molecular fragments that often bear tractable relationships with the parent structure on the surface. Disadvantages are that secondary ion formation is a poorly understood phenomenon and that quantification is often difficult. A major drawback is the matrix effect secondary ion yields of one element can vary tremendously with chemical environment. This matrix effect and the elemental sensitivity variation of five orders of magmtude across the periodic table make quantitative interpretation of SIMS spectra oftechmcal catalysts extremely difficult. [Pg.151]

In spite of quantitation problems, SIMS can give useful information if one uses appropriate reference materials. The spectra in Fig. 4.18 indicate that the relative intensities of the Zr02, ZrO and Zr , contain information on the chemical environment of the zirconium the zircomum ethoxide (O Zr = 4 1) shows higher intensities for the and ZrO signals than the calcined Zr02 (O Zr = 2 1). [Pg.151]


Fig. 1. Experimental techniques available for surface studies. SEM = Scanning electron microscopy (all modes) AES = Auger electron spectroscopy LEED = low energy electron diffraction RHEED = reflection high energy electron diffraction ESD = electron stimulated desorption X(U)PS = X-ray (UV) photoelectron spectroscopy ELS = electron loss spectroscopy RBS = Rutherford back scattering LEIS = low energy ion scattering SIMS = secondary ion mass spectrometry INS = ion neutralization spectroscopy. Fig. 1. Experimental techniques available for surface studies. SEM = Scanning electron microscopy (all modes) AES = Auger electron spectroscopy LEED = low energy electron diffraction RHEED = reflection high energy electron diffraction ESD = electron stimulated desorption X(U)PS = X-ray (UV) photoelectron spectroscopy ELS = electron loss spectroscopy RBS = Rutherford back scattering LEIS = low energy ion scattering SIMS = secondary ion mass spectrometry INS = ion neutralization spectroscopy.
Techniques based on the interaction of ions with solids, such as secondary ion mass spectrometry (SIMS) and low-energy ion scattering (LEIS) have undoubtedly been accepted in catalyst characterization, but are by no means as widely applied as for example X-ray photoelectron spectroscopy (XPS) or X-ray diffraction (XRD). Nevertheless, SIMS, with its unsurpassed sensitivity for many elements, may yield unique information on whether or not elements on a surface are in contact with each other. LEIS is a surface technique with true outer layer sensitivity, and is highly useful for determining to what extent a support is covered by the catalytic material. Rutherford backscattering (RBS) is less suitable for studying catalysts, but is indispensable for determining concentrations in model systems, where the catalytically active material is present in monolayer (ML)-like quantities on the surface of a flat model support. [Pg.85]


See other pages where Ion Spectroscopy SIMS, LEIS, RBS is mentioned: [Pg.150]    [Pg.151]    [Pg.153]    [Pg.379]    [Pg.505]    [Pg.150]    [Pg.151]    [Pg.153]    [Pg.379]    [Pg.505]    [Pg.269]    [Pg.95]    [Pg.274]    [Pg.269]    [Pg.80]    [Pg.85]    [Pg.269]    [Pg.615]    [Pg.442]    [Pg.405]   


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Ion spectroscopy

LEIS

RBS

SIM

SIMS

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