Ion Beam-Induced Enhanced Crystallization

The role of the a-c interface in Ion Beam Induced Epitaxial Crystallization (IBIEC) is demonstrated in Fig. 10.11, which shows that the regrowth rate is orientation dependent. The data shows that the rate is much lower (almost by a factor of 4) for (111) substrates relative to (100) substrates. These results suggest that the same interfacial defects that are responsible for thermal regrowth also are important in IBIEC, with the role of the ion beam being that of changing the average defect concentration. 

The dependence of the growth rate on temperature is illustrated in Fig. 10.12, for both IBIEC and thermal annealing. The growth rate is reported both in A s  

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