Anisotropic ion

Physical dry etching or sputter etching and ion Anisotropic profile is... 

A purely physical process caused by surface bombardment with high-energy ions anisotropic etching also with poor selectivity, high stirface damage, and low etching rates. 

Fig. 16. Deformation of A-decahedron. 1 03, II and 111 02. When A-site was occupied by large ion such as La, the A-site will be deformed to arrow direction of oxygen ions anisotropically.

M.p. 296 C. Accepts an electron from suitable donors forming a radical anion. Used for colorimetric determination of free radical precursors, replacement of Mn02 in aluminium solid electrolytic capacitors, construction of heat-sensitive resistors and ion-specific electrodes and for inducing radical polymerizations. The charge transfer complexes it forms with certain donors behave electrically like metals with anisotropic conductivity. Like tetracyanoethylene it belongs to a class of compounds called rr-acids. tetracyclines An important group of antibiotics isolated from Streptomyces spp., having structures based on a naphthacene skeleton. Tetracycline, the parent compound, has the structure ... 

Figure A3.10.8 Depiction of etching on a Si(lOO) surface, (a) A surface exposed to Br2 as well as electrons, ions and photons. Following etching, the surface either becomes highly anisotropic with deep etch pits (b), or more regular (c), depending on the relative desorption energies for different surface sites [28].

The flux of F radicals to tire wafer is nearly isotropic. Anisotropic etching is due to ions tliat are incident on tire wafer essentially perjDendicular to tire surface (see above). 

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