Interconnect Technology In Semiconductor Manufacturing

Daniel C. Edelstein1, P.C. Andricacos IBM T. J. Watson Research Center, Yorktown Heights, New York, USA 

Agarwala, C. Carnell, D. Chung, E. Cooney III, W.Cote, P. Locke, S. Luce, C. Megivern, R. Wachnik, and E. Walton 

IBM Microelectronics, Hopewell Junction, New York and Essex Junction, Vermont, USA 

Holeflll evolution for electroplated Cu with superfilling additive bath15. 

The previous thickness data was obtained from blanket-film depositions, but a high repeatability in actual microprocessor production is also seen, as in fig. 7. Here the lot-lot reproducibility of Cu mean thickness over months of production is shown to be well within the process specification limits. As Damascene patterns can influence the thickness measurements (which are based on sheet resistance), these data imply a very repeatable process. It is also important to maintain the bath chemistry in a production environment. 

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