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Injection/recombination

Heimer, T.A. Heilweil, E.J. Bignozzi, C.A. Meyer, G.J. (2000) Electron injection, recombination, and halide oxidation dynamics at dye-sensitized metal oxide interfaces. J Phys Chem A 104 4256-4262... [Pg.369]

Regular, human insulin injection (recombinant DNA origin) [FDA]... [Pg.514]

Figure 14. Hole injection into the VB of an n-type semiconductor from an oxidant (e.g., Fe ) and the injection/recombination pathway. Both surface-state mediated and depletion layer trap mediated routes are shown for the recombination. Figure 14. Hole injection into the VB of an n-type semiconductor from an oxidant (e.g., Fe ) and the injection/recombination pathway. Both surface-state mediated and depletion layer trap mediated routes are shown for the recombination.
Figure 17. Equivalent circuit representation of the injection/recombination process. (Reproduced with permission from Ref. [81].)... Figure 17. Equivalent circuit representation of the injection/recombination process. (Reproduced with permission from Ref. [81].)...
Injectable recombinant human insulin-like growth factor (rhIGF-I rINN mecasermin) has been available for nearly 20 years for treatment of the rare instances of growth hormone (GH) insensitivity caused by GH receptor defects or GH-inhibiting antibodies. It has also been used as an insulin-sensitizing agent in severe insulin-resistant conditions. Adverse reactions to mecasermin have been reviewed [24 ]. The most common adverse reaction is hypoglycemia, which is readily controlled by administration with meals. [Pg.772]

Effect of Different Anchoring Groups on the Electron Injection/ Recombination Dynamics... [Pg.179]

Figure 3.7 Schematic illustration of the relationship between structure and interfacial electron transfer properties in dye-sensitized nanostructured semiconductor materials. Control of the balance between electron injection, recombination and transport depends crucially on the physical separation and electronic coupling capabilities between the molecular donor and semiconductor acceptor states mediated by designated anchor and spacer groups. Figure 3.7 Schematic illustration of the relationship between structure and interfacial electron transfer properties in dye-sensitized nanostructured semiconductor materials. Control of the balance between electron injection, recombination and transport depends crucially on the physical separation and electronic coupling capabilities between the molecular donor and semiconductor acceptor states mediated by designated anchor and spacer groups.
The injection/recombination dynamics observed for sensitized nanocrystalline Ti02 films is fundamentally different from that observed for sensitized ZnO. The THz and TA kinetics of both dyes (Figure 5.13(a) and (c) see also Figures. 5.2 and 5.3 above) show that both cations and mobile conduction band electrons appear on the same ultrafast timescale (100 fs - 10 ps). This suggests... [Pg.168]


See other pages where Injection/recombination is mentioned: [Pg.746]    [Pg.266]    [Pg.230]    [Pg.514]    [Pg.590]    [Pg.124]    [Pg.146]    [Pg.147]    [Pg.2677]    [Pg.859]    [Pg.663]    [Pg.428]    [Pg.836]    [Pg.178]    [Pg.163]   
See also in sourсe #XX -- [ Pg.300 , Pg.303 ]




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Measurements of Surface Recombination and Minority Carrier Injection

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