Indium depth profile

S. Honda, A. Tsujimoto, M. Watamori, and K. Oura, Depth profiling of oxygen concentration of indium tin oxide films fabricated by reactive sputtering, Jpn. J. Appl. Phys., 33 L1257-L1260, 1994. 

Depth scale calibration of an SIMS depth profile requires the determination of the sputter rate used for the analysis from the crater depth measurement. An analytical technique for depth scale calibration of SIMS depth profiles via an online crater depth measurement was developed by De Chambost and co-workers.103 The authors proposed an in situ crater depth measurement system based on a heterodyne laser interferometer mounted onto the CAMECA IMS Wf instrument. It was demonstrated that crater depths can be measured from the nm to p,m range with accuracy better than 5 % in different matrices whereas the reproducibility was determined as 1 %.103 SIMS depth profiling of CdTe based solar cells (with the CdTe/CdS/TCO structure) is utilized for growing studies of several matrix elements and impurities (Br, F, Na, Si, Sn, In, O, Cl, S and ) on sapphire substrates.104 The Sn02 layer was found to play an important role in preventing the diffusion of indium from the indium containing TCO layer. 

Fig. 21 Depth profiles of a an unheated P3OT/C60 bilayer device and b a PSOT/Cao bilayer device heated at 130 °C. The concentrations of sulfur (solid lines), indium (dotted lines), and oxygen (dashed lines) were monitored. The arrow indicates the position of the P3OT/C60 interface as determined from absorption measurements. The unheated bilayer shows a rather sharp interface between P30T and 50 For the interdiffused film, the P30T concentration rises slowly throughout more than 100 nm (from 35 to 150 nm) of the bulk of the film. (Reprinted with permission from [133], 2005, American Institute of Physics)...

Figure 4 Depth profiles of (A) dissolved gallium in the central North Pacific (solid symbols 28°N 155°W Orians and Bruland, 1988) and in the western North Atlantic (open symbols 32°N 64°W Shiller, 1998), and (B) dissolved indium in the western North Pacific (solid symbols 34°N 142°E Amakawa eta ., 1996) and in the eastern North Atlantic (open symbols 26° N, 37°W Alibo etat., 1999).

It is not only the presence of contaminations that is important but also their distribution. Figure 40.11 shows depth profiles through an organic light-emitting diode (OLED) consisting of a layer structure Al/Ca/poly[2,5-Bis(2-ethylhexyloxy)-phenylenevinylene]/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/indium... 

X-ray diffraction patterns of the films showed peaks characteristic of the chalcopyrite copper indium selenide or copper indium telluride compounds. Auger spectra and depth profiles showed the expected signal plus some carbon and surface oxidation. The stoichiometry varied with depth. 

In addition to depth-profiling the active polymeric components of elertronic devices, IBA has proved to be a useful tool to study the diffusion of indium from the adjacent indium tin oxide (ETO) electrode into the polymer layers. Although the diffusion of In into active polymer layers does not predude the use of this comhination, the instability of the interface that was established by these experiments is certainly a cause for some concern when considering the operational lifetime of polymer LED devices. 

Indium (In) is a trivalent metal that exists as In(OH)3 in sea water, with a minor contribution from In(OH)4 (6%). Dissolved indium ranges from 0.05 to 4.7 pmol kg, with the lowest values in the North Pacific and the highest values in the Mediterranean. Vertical profiles of dissolved indium in the Pacific show low concentrations (0.06-0.10 pmolkg ) that are relatively invariant with depth, with a slight suggestion of a surface maximum. In the Atlantic the concentrations increase gradually with depth from 0.6 to 1.7 pmol kg, and in the Mediterranean the concentration is about 4pmolkg and relatively... 

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