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In-System Synchrotron Radiation Photoelectron Spectroscopy

The second term on the right-hand side of Equation 2.44, the chemical shift, is given by the effective charge of the considered atom and by the influence of the neighboring atoms. In a simple spherical charge model, this energy change can [Pg.95]

SRPES allows one to tune the photon energy to the desired surface sensitivity within the limits of XPS. As the mean inelastic scattering length for photoelectrons [Pg.97]


Among the related methods, specific experimental designs for applications are emphasized. As in-system synchrotron radiation photoelectron spectroscopy (SRPES) will be applied below for chemical analysis of electrochemically conditioned surfaces, this method will be presented first, followed by high-resolution electron energy loss spectroscopy (HREELS), photoelectron emission microscopy (PEEM), and X-ray emission spectroscopy (XES). The latter three methods are rather briefly presented due to the more singular results, discussed in Sections 2.4-2.6, that have been obtained with them. Although ultraviolet photoelectron spectroscopy (UPS) is an important method to determine band bendings and surface dipoles of semiconductors, the reader is referred to a rather recent article where all basic features of the method have been elaborated for the analysis of semiconductors [150]. [Pg.90]


See other pages where In-System Synchrotron Radiation Photoelectron Spectroscopy is mentioned: [Pg.94]   


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