Implementation of OAG to Different Semiconducting Materials

The OAG method has a general nature and can be applied to a variety of materials other than Si. Based on the OAG method, we have synthesized nanowires of a wide range of semiconducting materials including Ge [35], GaN [36, 37], GaAs [38, 39], GaP [41], SiG [40], and ZnO (whiskers) [42]. The actual OAG process was activated by laser ablation, hot-filament chemical vapor deposition (HFCVD) or thermal evaporation. 

The SiC nanowires exhibit a high density of (b) TEM image of the initial carbon nanotubes, 

The inset shows a selected area electron wires [68]. 

Gallium arsenide nanowires with a zinc-blende structure were fabricated by laser ablation of GaAs powders mixed with GazOs (no metal catalyst used). SEM obser- 

CaAs nanowires synthesized by the oxide-assisted method. The EDS in the inset indicates Ga, As, O and Si (b) a HRTEM image of a CaAs nanowire. The growth axis is close to the [TlT] direction (white arrow). The 

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