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HOMO highest occupied electronic effects

Figure 1 shows the electron attachment energies (AE) and ionization potentials (IP) of silyl substituted 7t-systems and related compounds [4], AE can be correlated with the energy level of the LUMO (lowest unoccupied molecular orbital) and IP can be correlated with the energy level of the HOMO (highest occupied molecular orbital). For a-substituted 7t-systems, the introduction of a silyl group produces a decrease in the tc -(LUMO) level. This effect is attributed to the interaction between a low-lying silicon-based unoccupied orbital such as the empty d orbital of silicon and the it orbital (d -p interaction) as shown in Fig. 2. Recent investigations on these systems, however, indicate that d orbitals on silicon are not necessarily required for interpreting this effect a-effects of SiR3 can also be explained by the interaction between Si-R a orbitals and the 7r-system. Figure 1 shows the electron attachment energies (AE) and ionization potentials (IP) of silyl substituted 7t-systems and related compounds [4], AE can be correlated with the energy level of the LUMO (lowest unoccupied molecular orbital) and IP can be correlated with the energy level of the HOMO (highest occupied molecular orbital). For a-substituted 7t-systems, the introduction of a silyl group produces a decrease in the tc -(LUMO) level. This effect is attributed to the interaction between a low-lying silicon-based unoccupied orbital such as the empty d orbital of silicon and the it orbital (d -p interaction) as shown in Fig. 2. Recent investigations on these systems, however, indicate that d orbitals on silicon are not necessarily required for interpreting this effect a-effects of SiR3 can also be explained by the interaction between Si-R a orbitals and the 7r-system.
With the use of the DV-Xa molecular orbital method, electronic structure calculations have been performed to investigate the impurity effect on material properties. Firstly, calculations were done for F atoms substituted for 0 (oxygen) atoms in copper oxide superconductors. It was found that the population of the atomic orbitals of F atoms is small in HOMO (highest occupied molecular orbital) and a small fraction of charge carriers enters the impurity sites. The F impurities are therefore expected to be effective for pinning magnetic flux lines in Cu oxide superconductors. [Pg.281]

Table I shows that the band gap, the energy difference between HOMO (highest occupied molecular orbitals) and LUMO (lowest unoccupied molecular orbitals) levels, decreases monotonically with the increase in network dimension. This decrease is caused by the delocalization of skeleton a electrons, which form both band edges. As is well known, eigenvalues of delocalized wave functions confined to a potential well are determined by the well size and potential-barrier heights. When delocalized wave functions are confined to a smaller area, the HOMO level moves downward and the LUMO level moves upwards, which results in the increase in band gap energy. This quantum size effect is given by... Table I shows that the band gap, the energy difference between HOMO (highest occupied molecular orbitals) and LUMO (lowest unoccupied molecular orbitals) levels, decreases monotonically with the increase in network dimension. This decrease is caused by the delocalization of skeleton a electrons, which form both band edges. As is well known, eigenvalues of delocalized wave functions confined to a potential well are determined by the well size and potential-barrier heights. When delocalized wave functions are confined to a smaller area, the HOMO level moves downward and the LUMO level moves upwards, which results in the increase in band gap energy. This quantum size effect is given by...
Close inspection of the solution phase redox peaks for the four species under analysis obtained in a thin layer cell in deaerated non-aqueous media (not shown here) yielded values for the onset of the reduction of the first Co site very similar to one another. Hence, it can only be surmised that the differences in specificity are related to the presence of the peripheral substituent and seemingly unrelated to the redox properties of the metal sites. Evidence that the differences in the specificity between the meso-substituted and non-meso-substituted materials are due to subtle electronic effects was provided by quantum mechanical calculations. These showed that upon addition of the weso-substituents, the electronic charge density associated with the HOMO (highest occupied molecular orbital) localized on the dioxygen moiety is markedly reduced, thereby weakening its Lewis acid character and hence its ability to coordinate a proton (see Figure 3.67). [Pg.267]

In this paragraph, devoted to the analysis of the gap width A, we will use a one-electron picture in which A is the energy difference between the highest occupied orbital (HOMO = highest occupied molecular orbital here the top of the valence band) and the lowest unoccupied orbital (LUMO = lowest unoccupied molecular orbital here the bottom of the conduction band). This amounts to neglecting the excitonic effects which take place in a gap measurement. A discussion of excitons is postponed to Chapter 4. [Pg.33]

The first term is the screened electrostatic interaction between the donor and acceptor charges Qi and Q2 - assumed to be point charges - at the equilibrium distance Rn in the adduct. The second term accounts for covalent effects. The factor of 2 indicates that two electrons are shared. The c coefficients are the molecular wave-function weights on atoms 1 and 2. The energies Em and E are equal, to a first approximation, to the frontier orbital energies the base HOMO (HOMO = highest occupied molecular orbital) and the acid LUMO (LUMO = lowest unoccupied molecular orbital), i.e. to the base first ionization potential and to the acid electron aflSnity. A typical frontier orbital diagram is shown in Fig. 6.1. [Pg.163]

Now, examine the orbital on cyclohexanone lithium enolate most able to donate electrons. This is the highest-occupied molecular orbital (HOMO). Identify where the best HOMO-electrophile overlap can occur. Is this also the most electron-rich site An electrophile will choose the best HOMO overlap site if it is not strongly affected by electrostatic effects, and if it contains a good electron-acceptor orbital (this is the lowest-unoccupied molecular orbital or LUMO). Examine the LUMO of methyl iodide and trimethylsilyl chloride. Is backside overlap likely to be successful for each The LUMO energies of methyl iodide and trimethylsilyl chloride are 0.11 and 0.21 au, respectively. Assuming that the lower the LUMO energy the more effective the interaction, which reaction, methylation or silylation, appears to be guided by favorable orbital interactions Explain. [Pg.168]

The rationale behind this choice of bond integrals is that the radical stabilizing alpha effect of such radicals are explained not by the usual "resonance form" arguments, but by invoking frontier orbital interactions between the singly occupied molecular orbital of the localized carbon radical and the highest occupied molecular orbital (the non-bonding electrons atomic orbital) of the heteroatom (6). For free radicals the result of the SOMO-HOMO interaction Ts a net "one-half" pi bond (a pi bond plus a one-half... [Pg.417]

Molecular orbital calculations have been performed on compounds 19 and 20 . The calculated PM3 equilibrium geometric structures show that these compounds are severely distorted from planarity in accordance with X-ray structural analysis (see Section 8.I2.3.I). On the other hand, PM3 calculations performed on both neutral and oxidized/reduced compounds show that oxidation and reduction induce a clear gain of aromaticity. Predictions using the nonempirical valence effective Hamiltonian (VEH) method have shown that the electronic charge density in the highest occupied molecular orbital (HOMO) is localized on the benzodithiin 19 or benzoxathiin 20 rings. [Pg.860]


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