High-Temperature SiC-FET Chemical Gas Sensors

Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage 

Other wide bandgap materials, such as GaN, AIN, and diamond, with band-gaps of 3.4, 6.3, and 5.5 eV, respectively, have also been explored by a number of 

We recently published a chapter in the book Silicon Carbide Recent Major Advances by Choyke et al. [19] that describes SiC gas sensor applications in detail. In this book, we emphasize device properties applications are only briefly reviewed at the end. The device and gas sensing properties of various field-effect chemical gas sensing devices based on SiC are described, and other wide bandgap material devices are reviewed. The detection principle and gas response is explained, and the buried channel SiC-FET device is described in detail. Some special phenomena related to the high-temperature influence of hydrogen at high temperature are also reported. 

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