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High-resolution electric field probe

Although calibrated Stark effects can provide a valuable new way of probing internal electric fields in semiconductors and devices, the theoretical calculation and prediction of these Stark coefficients is as yet at an inadequate stage. Also, while NMR Stark effects upon chemical shifts and exchange (J) couplings have been studied in high-resolution solution NMR, they have not yet been observed in the NMR of semiconductors. [Pg.244]

See other pages where High-resolution electric field probe is mentioned: [Pg.275]    [Pg.275]    [Pg.365]    [Pg.1474]    [Pg.56]    [Pg.55]    [Pg.188]    [Pg.41]    [Pg.100]    [Pg.254]    [Pg.137]    [Pg.191]    [Pg.59]    [Pg.194]    [Pg.201]    [Pg.305]    [Pg.316]    [Pg.177]    [Pg.55]    [Pg.51]    [Pg.4511]    [Pg.449]    [Pg.115]    [Pg.208]    [Pg.342]    [Pg.196]    [Pg.120]    [Pg.39]    [Pg.95]    [Pg.1474]    [Pg.4510]    [Pg.311]    [Pg.72]    [Pg.177]    [Pg.102]    [Pg.104]    [Pg.81]    [Pg.141]    [Pg.54]    [Pg.59]    [Pg.498]    [Pg.2781]    [Pg.780]    [Pg.27]    [Pg.5]    [Pg.323]    [Pg.323]    [Pg.14]    [Pg.147]    [Pg.163]   
See also in sourсe #XX -- [ Pg.275 ]



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