High-pressure sputtering system

The vacuum system must be able to attain the required pressures reliably despite these high gas loads. In the example shown, the system is evacuated with a combination of a backing and Roots pump. A diffusion pump along with a cold surface forms the high vacuum pump system. The cold surfaces pump a large portion of the vapor and volatile substances emitted by the plastic parts while the diffusion pump basically removes the non-condensable gases as well as the noble gas required for the sputter process. 

A more advanced sputtering technique utilizes ECR source to supply the power to the plasma. The advantage of the ECR sputtering system is that it enables the production of highly ionized plasma under low gas pressures. The ZnO films... 

Electrocatalytic activity of supported metal particles has been investigated on surfaces prepared in an ultrahigh vacuum (UHV) molecular beam epitaxy system (DCA Instruments) modified to allow high throughput (parallel) synthesis of thin-film materials [Guerin and Hayden, 2006]. The system is shown in Fig. 16.1, and consisted of two physical vapor deposition (PVD) chambers, a sputtering chamber, and a surface characterization chamber (CC), all interconnected by a transfer chamber (TC). The entire system was maintained at UHV, with a base pressure of 10 °mbar. Sample access was achieved through a load lock, and samples could be transferred... 

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