Semiconductor, heterostructures dynamics

Ultraviolet Raman spectroscopy has emerged as a powerful technique for characterization of nanoscale materials, in particular, wide-bandgap semiconductors and dielectrics. The advantages of ultraviolet excitation for Raman measurements of ferroelectric thin films and heterostructures, such as reduced penetration depth and enhanced scattering intensity, are discussed. Recent results of application of ultraviolet Raman spectroscopy for studies of the lattice dynamics and phase transitions in nanoscale ferroelectric structures, such as superlattices based on BaTiOs, SrTiOs, and CaTiOs, as well as ultrathin films of BaTiOs and SrTi03 are reviewed. 

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