Hematite semiconductor properties

Isomorphous substitution of iron oxides is important for several reasons. In the electronics industry, trace amounts (dopants) of elements such as Nb and Ge are incorporated in hematite to improve its semiconductor properties. Dopants are also added to assist the reduction of iron ores. In nature, iron oxides can act as sinks for potentially toxic M", M and M heavy metals. Investigation of the phenomenon of isomorphous substitution has also helped to establish a better understanding of the geochemical and environmental pathways followed by Al and various trace elements. Empirical relationships (e. g. Fe and V) are often found between the Fe oxide content of a weathered soil profile and the levels of various trace elements. Such relationships may indicate similarities in the geochemical behaviour of the elements and, particularly for Al/Fe, reflect the environment in which the oxides have formed (see chap. 16). 

Hematite, wiistite, maghemite and magnetite are semiconductors magnetite displays almost metallic properties. For a compound to be a semiconductor, the essential characteristic is that the separation between the valence band of orbitals and the conduction band is less than 5 eV this condition is met for the above oxides. In a semiconductor the Fermi level (i. e. the level below which all electron energy levels are filled) lies somewhere between the valence band and the conduction band. 

The principal iron oxides used in catalysis of industrial reactions are magnetite and hematite. Both are semiconductors and can catalyse oxidation/reduction reactions. Owing to their amphoteric properties, they can also be used as acid/base catalysts. The catalysts are used as finely divided powders or as porous solids with a high ratio of surface area to volume. Such catalysts must be durable with a life expectancy of some years. To achieve these requirements, the iron oxide is most frequently dis-... 

Recently, it was shown that transient absorption decay for hematite nanoparticles was very fast, 70% of the transient absorption disappeared within 8 ps and no measurable transient absorption remained beyond 100 ps [43]. This represented a much faster decay than many other semiconductors, which is consistent with the observed poor charge transfer properties in hematite. It should be mentioned that this decay was independent of the excitation power, which suggests alternative relaxation mechanisms compared to those observed for Ti02 and ZnO for instance [43]. Since the relaxation was independent of pump power, probe wavelength, pH and surface treatment the fast decay was interpreted to be due to intrinsic mid-bandgap states and trap states rather than surface defects. This is in agreement with earlier investigations [44]. 

A dielectric oxide layer such as silica is useful as shell material because of the stability it lends to the core and its optical transparency. The thickness and porosity of the shell are readily controlled. A dense shell also permits encapsulation of toxic luminescent semiconductor nanoparticles. The classic methods of Stober and Her for solution deposition of silica are adaptable for coating of nanocrystals with silica shells [864,865]. These methods rely on the pH and the concentration of the solution to control the rate of deposition. The natural affinity of silica to oxidic layers has been exploited to obtain silica coating on a family of iron oxide nanoparticles including hematite and magnetite [866-870]. The procedures are mostly adaptations of the Stober process. Oxide particles such as boehmite can also be coated with silica [871]. Such a deposition process is not readily extendable to grow shell layers on metals. The most successful method for silica encapsulation of metal nanoparticles is that due to Mulvaney and coworkers [872—875]. In this method, the smface of the nanoparticles is functionalized with aminopropyltrimethylsilane, a bifunctional molecule with a pendant silane group which is available for condensation of silica. The next step involves the slow deposition of silica in water followed by the fast deposition of silica in ethanol. Changes in the optical properties of metal nanoparticles with silica shells of different thicknesses were studied systematically [873 75]. This procedure was also extended to coat CdS and other luminescent semiconductor nanocrystals [542,876-879]. 

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