Growth of Amorphous Silicon

That hydrogen is responsible for the large reduction of the dangling bond density in amorphous silicon is demonstrated by studies of films grown by sputtering of silicon with an inert gas (Paul et al., 1976). When hydrogen is added to the argon carrier gas, the spin density is reduced to 1016/cm3, and the films can be doped. In contrast, sputtered amorphous 

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S. Jin, Q. Li, and C. Lee, Direct growth of amorphous silicon oxide nanowires and crystalline silicon nanowires from silicon wafer, Phys. Status Solidi A—Appl. Res. 188, Rl—R2 (2001). 

Film growth -of amorphous silicon [SEMICONDUCTORS - AMORPHOUSSEMICONDUCTORS](Vol21)... 

Surface bombardment by positive ions (particularly SiH ) plays a critical role in the growth of amorphous silicon films. The silane radicals SiHs and SiH2 have a positive electron affinity therefore, the silane discharge is essentially electronegative and dissociative attachment processes make a significant contribution in the balance of charged particles and production of negative silane ions ... 

To verify the model and to establish in which process parameter space it is valid, a comparison is made with experimental data. These experimental data are the partial pressures of silane, disilane, and hydrogen and the growth rate, obtained during deposition of amorphous silicon. Data are compared for various combinations of the total pressure in the reactor, the electrical power, and the frequency of the power source. 

The solubility and migration of Si02 is sharply increasing with increase of pH and temperature. In alkaline soil solution of Solonets, the solubility of amorphous silicon may be up to 100-200 mg/L. Tbe growth of temperature increases also the solubility (Figure 35). 

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