Growth bombardment-controlled

In this study, we control the film growth solely by substrate surface processes, by varying Ug and/or Tg, without affecting the bulk plasma parameters. This is possible when a third electrode, used as the substrate holder, is placed in the plasma system as shown in Fig. 1. A small amount of RF power delivered to this electrode results in a bias potential Vg which controls bombardment of the growing films by low energy ions. If the area of this third electrode is substantially smaller than that of the main RF electrode, its presence does not appreciably influence the plasma characteristics this has recently been confirmed by actinometric optical emission spectroscopy (8). 

The technology of growing carbon nanotubes from the vapor phase dates back to 1991 when they were first found [11] in arc discharge experiments. Nanotubes can be obtained by chemical vapor deposition, laser evaporation, arc discharge, and carbon ion bombardment [62], Addition of particulate metal catalysts creates a more controlled growth habitat and helps growth of whiskers with greatly enhanced dimensional uniformity. 

The photoexcited CVD process, being free of ion bombardment damage, allows selective excitation of reactant gas in a surface process only. Then the film growth process would treat as heterogeneous gas-phase reactions on the solid surface, which consist of series processes, i.e., surface chemical reaction of adsorption species and transportation of gas phase. We would control each process independently to grow stoichiometric BP films. 

Energetic adatoms and low energy ion bombardment during deposition can be used as a partial substitute for increased substrate temperature in the epitaxial growth process. Carefully controlled bombardment can lower the temperature at which epitaxy can be obtained. This is probably due to increased surface mobility of the adatoms. Ion beams of the depositing material ( film ions ) have also been used to deposit epitaxial films. ... 

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