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Group HgCdTe

Group II-VI materials (e.g., CdTe, HgCdTe) Detectors Vertical Bridgman, horizontal Bridgman... [Pg.50]

Bumps 12 are connected to detector elements 1 la which are formed in an HgCdTe substrate 11. Sets of bumps 4 comprising bumps 4a are formed in addition to the bumps 12. Each set of bumps is connected to a measuring pad 4c by an electrode 4b. In a second embodiment the bumps 4a are separated in groups, each group having a characteristic height. [Pg.289]

Group II-VI Materials are presently important for optoelectronics in two device applications at opposite spectral regions, as well as in photovoltaics. The two device applications are the blue and near UV emitters (ZnS, ZnSe) and the near to far IR detectors (HgCdTe). [Pg.234]

Geitnei, E. R., Edwall, D. D., Bubulac, L. O., Wood, L. E., Bajaj, J , Shin, S. H. and Tennant, W. E. 1983, Matodal Characteristics of HgCdTe/GdTe/Sapphire Substrates , Meeting of the IRIS Specialty Group on Infrared Detectors, National Bureau of Standards, Boulder, GO, 2-4 August 1983... [Pg.363]


See other pages where Group HgCdTe is mentioned: [Pg.392]    [Pg.365]    [Pg.365]    [Pg.181]    [Pg.916]    [Pg.1950]    [Pg.487]    [Pg.250]    [Pg.94]    [Pg.22]   
See also in sourсe #XX -- [ Pg.234 ]




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HgCdTe

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